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Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping

Published online by Cambridge University Press:  01 February 2011

Ji-Soo Park ,
J. Bai ,
M. Curtin ,
B. Adekore ,
Z. Cheng ,
M. Carroll ,
M. Dudley  and
A. Lochtefeld
Ji-Soo Park
Affiliation:
jpark@amberwave.com, AmberWave Systems Corp., Research, 13 Garabedian Drive, Salem, NH, 03079, United States, 603 870-8677, 603 870-8608
J. Bai
Affiliation:
jbai@amberwave.com, AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
M. Curtin
Affiliation:
mcurtin@amberwave.com, AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
B. Adekore
Affiliation:
badekore@amberwave.com, AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
Z. Cheng
Affiliation:
ccheng@amberwave.com, AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
M. Carroll
Affiliation:
mcarroll@amberwave.com, AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
M. Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, Stony Brook Univ., Dept. of Materials Science & Engineering, Stony Brook, NY, 11794, United States
A. Lochtefeld
Affiliation:
alochtefeld@amberwave.com, AmberWave Systems Corp., 13 Garabedian Drive, Salem, NH, 03079, United States
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Abstract

Defect-free germanium has been demonstrated in SiO2 trenches on silicon via aspect ratio trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls. Results were achieved through a combination of conventional photolithography, reactive ion etching of SiO2, and selective growth of Ge as thin as 450 nm. It was revealed that facets, when formed early on in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. This approach shows great promise for the integration of Ge and/or III-V materials, sufficiently large for key device applications, onto silicon substrates.

Keywords

dislocationsGetransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F10-05
Copyright
Copyright © Materials Research Society 2007

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