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Defect Structure of the Epitaxial Pd2 Si-Silicon Interface
Published online by Cambridge University Press: 15 February 2011
Abstract
The crystallography of the epitaxial Pd2 Si-silicon interface has been analyzed with special reference to the character of interfacial dislocations. It is proposed that the Pd2 Si which forms at the interface does so by the diffusion stimulated glide of transformation dislocations.
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- Copyright © Materials Research Society 1981
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