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Defects In 4H Silicon Carbide CVD Epilayers

Published online by Cambridge University Press:  15 February 2011

L. Zhou ,
P. Pirouz  and
J. A. Powell
L. Zhou
Affiliation:
Now at: Dept. of Materials Science and Engineering, 1304 W. Green St., University of Illinois, Urbana, IL 61801, lingzhou@uiuc.edu
P. Pirouz
Affiliation:
Dept. of Materials Science and Engineering, Case Western Reserve University, 10900 Euclid Ave., Cleveland, OH 44106
J. A. Powell
Affiliation:
NASA Lewis Research Center, 21000 Brookpark Road, MS 77-1, Cleveland, OH 44135
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Abstract

The characteristic defects of 4H-SiC homoepitaxial thin films grown on bulk substrates using chemical vapor deposition (CVD) are described based on transmission electron microscopy (TEM), atomic force microscopy (AFM) and surface decoration studies. Emphasis is placed on understanding the formation mechanism of surface triangular defects. Cross-sectional TEM observations revealed the existence of two variants of 3C-SiC inclusions in 4H epitaxial films. In the plan-view orientation, g4H = 3304 type reflections were found useful for distinguishing the two variants of 3C-SiC platelets that are present in the 4H epilayer. A decoration technique was employed to reveal the relationship between the 3C platelets and surface features, e.g., surface steps. A formation mechanism for surface triangular defects is proposed, which is partially confirmed by the etch pit patterns obtained on the epilayer surfaces after a molten KOH etch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 631
Copyright
Copyright © Materials Research Society 1997

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References

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