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Defects Related to Mixing Behavior of Highly Silicon-Doped GaAs/AlAs Superlatitices

Published online by Cambridge University Press:  26 February 2011

N. D. Theodore ,
C. B. Carter ,
P. Mei ,
S. A. Schwarz ,
J. P. Harbison  and
T. Venkatesan
N. D. Theodore
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
P. Mei
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08855
S. A. Schwarz
Affiliation:
Bell Communications Research Inc., Redbank, NJ 07701–7020
J. P. Harbison
Affiliation:
Bell Communications Research Inc., Redbank, NJ 07701–7020
T. Venkatesan
Affiliation:
Bell Communications Research Inc., Redbank, NJ 07701–7020
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Abstract

The mixing of highly silicon-doped GaAs/AlAs superlattices as a result of annealing has been investigated by transmission electron microscopy and secondary ion mass spectrometry. As silicon doping-levels were raised in this study to 1019 cm−3 and 1020 cm−3 defects such as prismatic dislocation loops and Si-rich precipitates were observed to occur in the superlattices upon annealing. A correlation has been observed between the presence of particular defects and the inhibition of dopant-enhanced superlattice mixing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 139
Copyright
Copyright © Materials Research Society 1989

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References

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