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Degradation of Porous Si Layers Caused by Thermal Treatment

Published online by Cambridge University Press:  28 February 2011

H. Münder ,
M. G. Berger ,
S. Frohnhoff ,
H. Lüth ,
U. Rossow ,
U. Frotscher  and
W. Richter
H. Münder
Affiliation:
Institut fur Schicht- und Ionentechnik, Forschungszentrum Jülich, 5170 Jülich, Germany
M. G. Berger
Affiliation:
Institut fur Schicht- und Ionentechnik, Forschungszentrum Jülich, 5170 Jülich, Germany
S. Frohnhoff
Affiliation:
Institut fur Schicht- und Ionentechnik, Forschungszentrum Jülich, 5170 Jülich, Germany
H. Lüth
Affiliation:
Institut fur Schicht- und Ionentechnik, Forschungszentrum Jülich, 5170 Jülich, Germany
U. Rossow
Affiliation:
Institut fiir Festkorperphysik, Tuberlin, 1000 Berlin, Germany
U. Frotscher
Affiliation:
Institut fiir Festkorperphysik, Tuberlin, 1000 Berlin, Germany
W. Richter
Affiliation:
Institut fiir Festkorperphysik, Tuberlin, 1000 Berlin, Germany
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Abstract

Porous Si Alms formed on different p-doped substrates are studied by Raman spectroscopy, photoluminescence, and spectroscopic ellipsometry. Due to a thermal treatment the morphology is changed. A reduction in the number of nanocrystals with diameters below 30Å is found. It is shown that the photoluminescence is caused by the formation of small nanocrystals and that the effect of amorphous Si as a basic mechanism can be ruled out. The strain which must be taken into account for the interpretation of the Raman spectra decreases with increasing heating temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 281
Copyright
Copyright © Materials Research Society 1993

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References

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