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Deposition Mechanism of Tungsten Silicide Films by Low Pressure CVD

Published online by Cambridge University Press:  25 February 2011

Jae H. Sone  and
Hyeong J. Kim
Jae H. Sone
Affiliation:
Seoul National University, Dept. of Inorganic Materials Engineering, Seoul, Korea
Hyeong J. Kim
Affiliation:
Seoul National University, Dept. of Inorganic Materials Engineering, Seoul, Korea
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Abstract

WSix thin films were deposited on SiO2/Si substrates by Low Pressure Chemical Vapor Deposition (LPCVD) using WF6 and SiH4 gases. The deposition mechanism has been studied by measuring the thickness, resistivity and composition of the films by varying deposition temperature and gas flow rate at a constant total reactant gas pressure. Below 300°C, the surface chemical reaction was the rate-limiting process and the deposition rate increased exponentially with temperature having a thermal activation energy of 3.2 kcal/mol. Meanwhile, above 300°C the reaction was governed by the mass transfer step in the gas. The deposition rate in this range is insensitive to the deposition temperature but shows dependence of the flow rate of reactant gases. AES and RBS analyses were performed to determine the stoichiometry of WSix thin film. The Si content in film gradually increased as the deposition temperature increased. The resistivity of as-deposited WSix film has dependence on both deposition temperature and Si/W ratio, and exponentially increased with a moderate slope. However, temperature insensitive behavior of resistivity appeared in the mass transfer controlled region. Such resistivity changes with temperature were discussed with the Si/W ratio and the microstructure of films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 621
Copyright
Copyright © Materials Research Society 1990

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References

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