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Deposition of Amorphous and Microcrystalline Si,C Alloy Thin Films by a Remote Plasma-Enhanced Chemical-Vapor Deposition Process

Published online by Cambridge University Press:  21 February 2011

C. Wang ,
G. Lucovsky  and
R. J. Nemanich
C. Wang
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
R. J. Nemanich
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

We have extended the remote PECVD process to the deposition of intrinsic and doped, amorphous and microcrystalline silicon, carbon alloy films, a-Si,C:H and μc-Si,C, respectively. The electrical and optical properties of a-Si,C:H deposited by remote PECVD are comparable to those of films deposited by the glow discharge or GD process. The degree of crystallinity in the μc-Si,C alloys, as determined from the relative intensities of crystalline and amorphous features in the Raman spectra, is lower than that of μc-Si films deposited under comparable deposition conditions. The Raman spectra indicate that the crystallites in the μc-Si,C alloys are Si, while the infrared measurements establish that the intervening amorphous component is an a-Si,C:H alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 751
Copyright
Copyright © Materials Research Society 1991

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References

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