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Deposition of Highly Transparent and Conductive Fluorine Doped Zinc Oxide Films

Published online by Cambridge University Press:  25 February 2011

Jianhua Hu  and
Roy G. Gordon
Jianhua Hu
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
Roy G. Gordon
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
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Abstract

Zinc oxide films have been deposited from dimethyl zinc and oxygen in an atmospheric pressure laminar flow reactor at temperatures ranging from 300°C to 450°C. Highly oriented, conductive and transparent films were obtained at temperatures above 400°C by doping the films with fluorine. The crystallite sizes increase with increasing deposition temperature. From electron microprobe analysis, the doped films usually contained 0.5% to 2% fluorine atoms. Hall coefficient and resistance measurements at room temperature gave electron concentrations above 1020cm−3 and resistivities around 10−3 Ωcm. The doped films had mobilities varying from 20 to 40 cm2/V-s depending on the deposition temperature and fluorine concentration. These are the highest mobilities reported for zinc oxide films. The experimental results were then compared with those obtained from a simple resistivity network model which includes the effects of impurity and grain boundary scattering. Films with a sheet resistance of 5 Ω/square have visible absorption of about 5 to 10%. These properties are very suitable for applications as transparent electrodes for flat-panel displays and other electro-optical devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 457
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Hamberg, I. and Granqivst, C.G., J. Appl. Phys. 60, (1986) R123.Google Scholar
2. Nanto, H., Minami, T., Shooji, S. and Takata, S., J. Appl. Phys. 55, (1984) 1029.Google Scholar
3. Hu, J. and Gordon, R.G., to be published in Solar Cells.Google Scholar
4. Vijayakumar, P.S. et al, U.S. Patent 4, 751,149 (1988).Google Scholar
5. Jin, Z.-C., Hamberg, I. and Granqvist, C.G., J. Appl. Phys. 64, (1988) 5117.Google Scholar
6. Qiu, S.N., Qiu, C.X. and Shih, I., Solar Energy Mater. 15, (1987) 261.Google Scholar
7. Smith, F.T.J., Appl. Phys. Lett. 43, (1983) 1108.Google Scholar
8. Lau, C.K., Tiku, S.K. and Lakin, K.M., J. Electrochem. Soc. 127, (1980) 1843.Google Scholar
9. Oda, S. et al, Jpn. J. Appl. Phys. 24, (1985) 1607.Google Scholar
10. Proscia, J., Ph.D. Thesis, Harvard University (1988).Google Scholar
11. Strickler, D., Ph.D. Thesis, Harvard University (1989).Google Scholar
12. Hamberg, I. and Granqvist, C.G., Appl. Opt. 24, (1985) 1815.Google Scholar