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Deposition of Si Thin Films by Reactive CVD

Published online by Cambridge University Press:  15 February 2011

Jun-Ichi Hanna
Jun-Ichi Hanna*
Affiliation:
Tokyo Institute of Technology, Imaging Science & Engineering Lab. Nagatsuta, Midori-ku, Yokohama 226, Japan
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Abstract

A new concept of Reactive CVD is proposed for the low-temperature growth of thin films by CVD and discussed in terms of general features of such film growth. One demonstrated example of the reactive CVD, called Spontaneous Chemical Deposition, features gas phase reactions of silane with fluorine is outlined in terms of the general characteristics of the film growth and properties.

In addition, a second example of reactive CVD, called Reactive Thermal CVD and involving thermal CVD of poly-SiGe from germanium fluoride and disilane, is discussed and low-temperature growth using this method is reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 105
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCE

1) Semiconductors and Semimetals: Vol. 21 Part D Ed. by Pankove, J.I. Accademie Press Inc., (1984)Google Scholar
2) Spearand, W.E., LeComber, P.G.: Philos. Mag. 33 (1976) 935 Google Scholar
3) Semiconductors and Semimetals: Vol. 21 Part A Ed. by Pankove, J.I. Accademie Press Inc., (1984) p153–222 Google Scholar
4) Itabashi, N., Kato, K., Noshiwaki, N., Goto, T., Yamada, C., and Hirota, E.: Jpn. J. Appl. Phys., 27 (1988) L1565 Google Scholar
5) Hanna, J., Kamo, A., Komiya, T., Nguyen, H.D., Shimizu, I. and Kokado, H.: Mat. Res. Soc. Symp. Proc., 149 (1989) 11 Google Scholar
6) Komiya, T., Kamo, A., Kujirai, H., Shimizu, I. and Hanna, H.: Mat. Res. Soc. Symp. Proc., 164 (1991) 63 Google Scholar
7) Kawamura, C., Shimizu, I. and Hanna, J.: J. Non-cryst. Solids 137 & 138 (1991) 697 Google Scholar
8) Endo, K., Bunyo, M., Shimizu, I. and Hanna, J.: Mat. Res. Soc. Symp. Proc., 283 (1993) 641 Google Scholar
9) Hanna, J.: New Functional Materials, Vol. C Elsevier, (1993) 189 Google Scholar
10) Yamamoto, M., Miyauchi, M. and Hanna, J.: Appl. Phys. Lett., 63 (1993) 2508 Google Scholar
11) Yamamoto, M., Takada, Y. and Hanna, J.: Appl. Phys. Lett., 64 (1994) 3467 Google Scholar
12) Hanna, J., Ohuchi, T. and Yamamoto, M.: Mat. Res. Soc. Proc., 358 (1995) in press.Google Scholar
13) Tungsten and Other Advanced Metals for VLSI/ULSI Applications, edited by Wang, S.W. and Furukawa, S. (Materials Research Society. Pittsburgh, (1990)Google Scholar
14) Yamamoto, M., Takada, Y. and Hanna, J.: to be submitted.Google Scholar