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Design and Simulation of High Efficiency Silicon Light-Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

Grant Z. Pan ,
Jaime Peretzman ,
Dae H. Pak  and
Li P. Ren
Grant Z. Pan
Affiliation:
gzpan@ee.ucla.edu, UCLA, Microfabrication Laboratory/EE, 420 WESTWOOD PLAZA, LOS ANGELES, CA, 90095, United States, 310 825 4593, 310 267 5277
Jaime Peretzman
Affiliation:
peretzman@gmail.com, University of California at Los Angeles, Microfabrication Laboratory, Los Angeles, CA, 90095, United States
Dae H. Pak
Affiliation:
santana97@ucla.edu, University of California at Los Angeles, Microfabrication Laboratory, Los Angeles, CA, 90095, United States
Li P. Ren
Affiliation:
lpren@globalnanosystems.com, Global Nanosystems, Inc., Nanoelectronics and Nanophotonics Laboratory, Los Angeles, CA, 90025, United States
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Abstract

Four boron-implanted p-n junction silicon light-emitting diode structures were designed and simulated under an identical process flow by using Silvaco simulators. In the simulation, only boron-implant parameters and post-implant anneal conditions were varied to identify and compare the physical, electrical, and optical properties of the structures. It was found that a pillar structure with a wrapped p-n junction has the greatest radiative recombination rate. Regardless the structure type, the maximum radiative recombination rate always occurs within the p+ region. There exists a peak in the maximum radiative recombination rate when the anneal temperature increases from 700 to 1100 °C, and the anneal temperature at peak increases while the implant dose increases. Furthermore, the radiative recombination rate always increases with the implant dose but it saturates at a high dose. However, the radiative recombination rate does not change significantly with the implant energy.

Keywords

Sisimulationluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-23
Copyright
Copyright © Materials Research Society 2007

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