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Detailed study of metastable effects in the Cu(InGa)Se2 alloys: Test of defect creation models

Published online by Cambridge University Press:  01 February 2011

JinWoo Lee ,
Jennifer T. Heath ,
J. David Cohen  and
William N. Shafarman
JinWoo Lee
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403U.S.A.
Jennifer T. Heath
Affiliation:
Department of Physics, Linfield College, McMinnville, OR 97128U.S.A.
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403U.S.A.
William N. Shafarman
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716U.S.A.
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Abstract

We have investigated metastable changes to Cu(InGa)Se2 solar cells in response to infrared optical exposure and forward injection current. Using the drive level capacitance profiling and admittance spectroscopy techniques, we are able to distinguish changes in the free hole carrier concentration from those of a deeper bulk trap. For both types of treatment, changes in these concentrations clearly follow a 1:1 ratio, in agreement with recent predictions of a microscopic model proposed by Lany and Zunger. The creation kinetics follow a strongly sub-linear power law at 250K, and we demonstrate that we can account for this using rate equations in which the metastable effect is initiated by electron capture into an empty defect state. The dependence on time and light intensity is (time) 0.22± 0.03 and (intensity) 0.53± 0.06, except at high light intensities where saturation is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F12.4
Copyright
Copyright © Materials Research Society 2005

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References

1 Igalson, M. and Schock, H.W., J. Appl. Phys., 80, 5765 (1996).Google Scholar
2 Walter, T., Herberholtz, R., Müller, C., and Schock, H.W., Mat. Res. Soc. Symp. Proc. 426, 279 (1996).Google Scholar
3 Rau, U., Schmitt, M., Parisis, J., Riedl, W., Karg, F., Appl. Phys. Lett., 73, 223 (1998).Google Scholar
4 Heath, J. T., Cohen, J. D. and Shafarman, W., J. Appl. Phys. 95, 1000 (2004).Google Scholar
5 Lany, S. and Zunger, A., Phys. Rev. Lett. 93, 156404 (2004).Google Scholar
6 Lee, JinWoo, Cohen, J. David, and Shafarman, William N., Thin Solid Films, in press.Google Scholar
7For an early example of these types of arguments to explain metastable defect creation in amorphous silicon see Stutzmann, M., Jackson, W. and Tsai, C., Phys. Rev. B 32, 23 (1982).Google Scholar