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Development of an Ab-initio Model of the Lattice Thermal Conductivity in Semiconductor Thin Films and Nanowires

Published online by Cambridge University Press:  21 March 2011

Jie Zou  and
Alexander Balandin
Jie Zou
Affiliation:
Department of Electrical Engineering University of California at Riverside Riverside, California 92521, U.S.A.
Alexander Balandin
Affiliation:
Department of Electrical Engineering University of California at Riverside Riverside, California 92521, U.S.A.
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Abstract

A model for calculating the lattice thermal conductivity in semiconductor thin films and nanowires is developed. It is based on the solution of phonon Boltzmann equation and takes into account phonon dispersion modification due to confinement effects and non-equilibrium phonon redistribution. Phonon spatial confinement at the structure boundaries leads to modification of the acoustic phonon dispersion and corresponding drop in the mode-averaged group velocity. Scattering from rough boundaries and interfaces introduces a change in the non-equilibrium phonon distribution as compared to bulk. These effects lead to a reduction in the in-plane lattice thermal conductivity in both thin films and nanowires. The predicted values for the lattice thermal conductivity and their temperature and interface roughness dependence are in good agreement with available experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 677: Symposium AA – Advances in Materials Theory and Modeling–Bridging Over Multiple-Length and Time Scales , 2001 , AA6.7
Copyright
Copyright © Materials Research Society 2001

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References

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