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Development of Thermally Stable Indium-Based Ohmic Contacts to N-Type GaAs

Published online by Cambridge University Press:  25 February 2011

Masanori Murakami ,
H. J. Kim ,
W. H. Price ,
M. Norcott  and
Y. C. Shih
Masanori Murakami
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
H. J. Kim
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
W. H. Price
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
M. Norcott
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Y. C. Shih
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

Development of low resistance ohmic contacts to n-type GaAs which withstand high temperature cycles without degrading their electrical properties is crucial for fabrication of high performance GaAs integrated circuits. Prior to our work, indium-based ohmic contact materials were not attractive for actual devices, because the contacts provided resistances higher than those of the widely used AuNiGe contacts, were thermally unstable after contact formation, and had rough surface morphology. Recently, based on analysis of the interfacial microstructure of these contacts, several thermally stable, low resistance In-based ohmic contacts to n-type GaAs have been developed in our laboratories using a standard evaporation and lift-off technique and annealing by a rapid thermal annealing method. The present paper points out the reasons for the poor electrical properties and thermal stability of the “traditional” In-based ohmic contacts, and reviews the recent progress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 151
Copyright
Copyright © Materials Research Society 1989

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