Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-07-05T02:18:39.597Z Has data issue: false hasContentIssue false

Development of Zinc Phosphide as an Absorber Using Chemical Reflux Technique.

Published online by Cambridge University Press:  12 July 2012

Siva P Adusumilli
Affiliation:
Center for Autonomous Solar Power, State University of New york at Binghamton, Binghamton, New york 13902, U.S.A.
Parag Vasekar
Affiliation:
Center for Autonomous Solar Power, State University of New york at Binghamton, Binghamton, New york 13902, U.S.A.
Daniel VanHart
Affiliation:
Center for Autonomous Solar Power, State University of New york at Binghamton, Binghamton, New york 13902, U.S.A.
Tara Dhakal
Affiliation:
Center for Autonomous Solar Power, State University of New york at Binghamton, Binghamton, New york 13902, U.S.A.
Charles R. Westgate
Affiliation:
Center for Autonomous Solar Power, State University of New york at Binghamton, Binghamton, New york 13902, U.S.A.
Seshu Desu
Affiliation:
Formerly at the State University of New York at Binghamton, Binghamton, New York 13902, USA
Get access

Abstract

Recent trend in thin film solar cells is to use earth abundant materials such as zinc and iron. Zinc phosphide (Zn3P2) has been has been explored as a choice for solar cell absorber and is currently reviving attention. Zinc phosphide is synthesized from earth-abundant constituents. We have already optimized zinc phosphide phase both in nanocrystalline and bulk thin film form. The purpose of this study is to study growth conditions at different temperatures. In this study, Trioctylphosphine (TOP) is used as a source of phosphorous which reacts with zinc and results in the growth of Zn3P2. The synthesized zinc phosphide phase has been characterized using SEM, EDS, XRD and XPS. We report a simple and repeatable process for synthesis of Zn3P2 phase.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bichat, M., Pascal, J., Gillot, F., and Favier, F., “Electrochemical lithium insertion in Zn3P2 zinc phosphide,” Journal of Physics and Chemistry of Solids 67, 12331237.Google Scholar
2. Shen, G., Chen, P., Bando, Y., Golberg, D., and Zhou, C., “Single-Crystalline and Twinned Zn3P2 Nanowires: Synthesis, Characterization, and Electronic Properties,” The Journal of Physical Chemistry C 112, 1640516410 (2008).Google Scholar
3. Misiewicz, J., Bryja, L., Jezierski, K., Szatkowski, J., Mirowska, N., Gumienny, Z., and Placzek-Popko, E., “Zn3P2–a new material for optoelectronic devices,” Microelectron. J. 25, xxiii-xxviii (1994).Google Scholar
4. Mirowska, N. and Misiewicz, J., “Influence of semiconductor surface preparation on photoelectric properties of Al–Zn3P2 contacts,” Materials Science and Engineering: B 130, 4956 (2006).Google Scholar
5. Misiewicz, J., Szatkowski, J., Mirowska, N., Gumienny, Z., and Płaczek-Popko, E., “Zn3P2-a new material for optoelectronic devices,” Materials Science and Engineering: B 9, 259262 (1991).Google Scholar
6. Sathyamoorthy, R., Sharmila, C., Natarajan, K., and Velumani, S., “Influence of annealing on structural and optical properties of Zn3P2 thin films,” Mater Charact 58, 745749.Google Scholar
7. Murali, K. R. and Rao, D. R., “Optical band gap of [alpha]-Zn3P2,” Thin Solid Films 86, 283286 (1981).Google Scholar
8. Lousa, A., Bertrian, E., Varela, M., and Morenza, J. L., “Deposition of Zn3P2 thin films by coevaporation,” Solar Energy Materials 12, 5156.Google Scholar
9. Long, J., “The Growth of Zn3P2 by Metalorganic Chemical Vapor Deposition,” J. Electrochem. Soc. 130, 725728 (1983).Google Scholar
10. Bhushan, M. and Catalano, A., “Polycrystalline Zn3P2 Schottky barrier solar cells,” Applied Physics Letters 38, 3941 (1981).Google Scholar
11. Nauka, K. K., “Minority-carrier diffusion length in Zn3P2,” Physica status solidi.A: Applied research 65, K95K97 (1981).Google Scholar
12. Wyeth, N. C. and Catalano, A., “Spectral response measurements of minority‐carrier diffusion length in Zn3P2,” Journal of Applied Physics 50, 14031407 (1979).Google Scholar
13. Kakishita, K., “Zinc phosphide epitaxial growth by photo-MOCVD,” Appl. Surf. Sci. 79, 281 (1994).Google Scholar
14. Catalano, A., “Defect dominated conductivity in Zn3P2,” The Journal of physics and chemistry of solids 41, 635 (1980).Google Scholar
15. Casey, M. S., Fahrenbruch, A. L., and Bube, R. H., “Properties of zinc‐phosphide junctions and interfaces,” Journal of Applied Physics 61, 29412946 (1987).Google Scholar
16. Bhushan, M., Turner, J. A., and Parkinson, B. A., “Photoelectrochemical Investigation of Zn 3P2,” J. Electrochem. Soc. 133, 536539 (1986).Google Scholar
17. Nayak, A. and Banerjee, H.D., “X-ray photoelectron spectra of Zn3P2-Cd3P2 alloy semiconducting thin films”, Materials Chemistry and Physics 60, 9598 (1999).Google Scholar
18. Nayak, A. and Banerjee, H.D., “ X-ray photoelectron spectroscopy of zinc phosphide thin film”, Applied Surface Science 148, 205210 (1999).Google Scholar