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Diamond Doping by Low Energy Ion Implantation During Growth

Published online by Cambridge University Press:  21 February 2011

K.D. Jamison ,
H.K. Schmidt ,
D. Eisenmann  and
R.P. Hellmer
K.D. Jamison
Affiliation:
S.I. Diamond Technology, Inc., 2435 North Blvd., Houston, TX 77098
H.K. Schmidt
Affiliation:
S.I. Diamond Technology, Inc., 2435 North Blvd., Houston, TX 77098
D. Eisenmann
Affiliation:
S.I. Diamond Technology, Inc., 2435 North Blvd., Houston, TX 77098
R.P. Hellmer
Affiliation:
S.I. Diamond Technology, Inc., 2435 North Blvd., Houston, TX 77098
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Abstract

A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (∼10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (∼10 Torr of a 99.5% H2 - 0.5% CH4 gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 251
Copyright
Copyright © Materials Research Society 1993

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References

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