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Dielectric and Transverse Piezoelectric Characterization of Sol-Gel Derived Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) FILMS WITH {100} and {111} Textures

Published online by Cambridge University Press:  10 February 2011

Jeong Hwan Park  and
Susan Trolier-McKinstry
Jeong Hwan Park
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Susan Trolier-McKinstry
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Highly {100} and {111} oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) films were deposited on Pt(111)-passivated silicon substrates using a modified sol-gel process. In both cases, the degree of preferred orientation did not change with film thickness from 0.56 μm to 1.5 μm. The room temperature dielectric constants for the {100}-oriented films were 2100–2650, while those for the {111} oriented films were 1900–2350. In both cases tan δ was less than 0.03. It was found that the piezoelectric coefficient (d31) of the PMN-PT films increased with increasing film thickness. The d31 coefficient of highly {100} oriented PMN-PT films poled for 5 minutes at 85 kV/cm were found to range from –45 to –86 pC/N assuming a Young's modulus of 35 GPa. Highly {100} oriented PMN-PT films showed larger piezoelectric coefficients than {111} oriented films. Results on aging of the piezoelectric coefficients for the differently oriented films are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 511
Copyright
Copyright © Materials Research Society 2000

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References

1. Scott, J. F. and Paz de Araujo, C. A., Science 246 1400–405 (1989).Google Scholar
2. Dimos, D., Lockwood, S. J., and Schwartz, R. W., IEEE Trans. Comp. Pack Man. Tech., A18 174–179 (1995).Google Scholar
3. Du, X- H., Zheng, J., Belegunda, U., and Uchino, K., Appl. Phys. Lett., 72 [19] 2421–23 (1998).Google Scholar
4. Aoki, K., Fukuda, Y., Numata, K., and Nishimura, A., Jpn. J. Appl. Phys., 33 [9B], 5155–58 (1994).Google Scholar
5. Park, J. H. and Kang, D. H., and Yoon, K. H., J. Am. Ceram. Soc., 82 [8] 2116–20 (1999).Google Scholar
6. Maria, J-P Ph. D. Thesis, The Pennsylvania State University, 1998 Google Scholar
7. Budd, K. D., Dey, S. K., and Payne, D. A., 36, 107–121 (1985).Google Scholar
8. Shephard, J. F. Jr, Xu, F., Kanno, I., and Trolier-McKinstry, S., J Appl. Phys., 85 [9] 6711–16 (1999).Google Scholar
9. Park, S. E. and Shrout, T. R., U.S. Navy Workshop on Acoustic Transduction Materials and Devices, The Penn Stater Conference Center, PA 1999.Google Scholar
10. Maria, J- P., Hackenberger, W., and Trolier-McKinstry, S., J Appl. Phys., 84 [9] 5147–54 (1998)Google Scholar
11. Kumazawa, T., Kumagai, Y., Miura, H., and Kitano, M., Appl. Phys. Lett., 72 [5] 608–10 (1998).Google Scholar
12. Shepard, J. F. Jr, McKinstry, S. T., and Hendrickson, M. A., 10th International Symposium on Applications of Ferroelectrics, New Brunswick, NJ, 1996, pp. 161–165.Google Scholar
13. Kholkin, A. L. and Setter, N., Appl. Phys. Lett., 71 [19] 2854–56 (1997).Google Scholar