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Diffusion Barriers for Fluorinated Low-k Dielectrics

Published online by Cambridge University Press:  10 February 2011

M. DelaRosa ,
A. Kumar ,
H. Bakhru  and
T.-M. Lu
M. DelaRosa
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180 Tel. 518–276–2479, delarosa@unix.cie.rpi.edu
A. Kumar
Affiliation:
University at Albany, Albany, NY 12222
H. Bakhru
Affiliation:
University at Albany, Albany, NY 12222
T.-M. Lu
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180 Tel. 518–276–2479, delarosa@unix.cie.rpi.edu
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Abstract

The fluorinated low-k dielectrics SiO:F and Teflon AF were investigated for process integration with aluminum and copper interconnects. To minimize fluorine diffusion, several potential barrier materials were deposited onto the fluorinated dielectrics and characterized after heat treatment at temperatures up to 450°C. The barrier layers studied include conventional materials such as Ta, TaN, and TiN, in addition to several novel materials. Barrier layer materials were deposited using evaporation, and sputtering. The materials were characterized using nuclear reaction analysis (NRA) to determine the fluorine concentration profile. A reaction zone was noted at the dielectric-barrier interface on several samples, corresponding to the formation of a fluoride complex. hI some instances, this fluoride layer was self-limiting and prevented further fluorine diffusion through the remainder of the barrier layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 559
Copyright
Copyright © Materials Research Society 1999

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