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Diffusion of Ion Implanted Mg and Be in GaAs

Published online by Cambridge University Press:  25 February 2011

H. G. Robinson ,
M. D. Deal  and
D. A. Stevenson
H. G. Robinson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
M. D. Deal
Affiliation:
Center for Integrated Systems, Stanford University, Stanford CA, 94305
D. A. Stevenson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
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Abstract

Annealed Mg implants into GaAs show three diffusion regions: 1) rapid uphill diffusion in the peak of the implant; 2) rapid concentration-independent diffusion in the tail; and 3) slow concentration-dependent diffusion in between. Implanted Be, in contrast, exhibits only concentration-dependent diffusion. Constant Fermi level experiments show that this diffusion is actually hole-dependent. Uphill diffusion can be induced in Be implants by co-implanting with a heavier element such as Ar. Paradoxically, this retards the concentration-dependent diffusion. This behavior can be explained with the Substitutional-Interstitial-Diffusion (SID) mechanism and an understanding of the defect chemistry after implantation. In the region of uphill diffusion, the dopants are seen to getter from areas of excess Ga interstitials toward areas of excess Ga vacancies. The magnitude of the Ga interstitial gradient with respect to the dopant concentration is shown to be critical for the uphill diffusion. The reduction in concentration-dependent diffusion with co-implants is thought to be caused by implant damage allowing dopant atoms to shift from interstitial to substitutional sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 653
Copyright
Copyright © Materials Research Society 1990

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References

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