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Digital Electrochemical Etching of Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

Q. Paula Lei  and
John L. Stickney
Q. Paula Lei
Affiliation:
Department of Chemistry, University of Georgia, Athens, Georgia 30602
John L. Stickney
Affiliation:
Department of Chemistry, University of Georgia, Athens, Georgia 30602
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Abstract

The principles for an electrochemical digital etching method for compound semiconductors are described and initial results reported. The method is designed to allow atomic level control over the etching process, resulting in the removal of a bilayer of the compound for each cycle. An atomic layer of one element is removed at one potential and then an atomic layer of the second element is removed at a second potential to complete one cycle. The results reported here are for the etching of CdTe. For CdTe, Te is stripped by reduction to Te2- while Cd is stripped by oxidation to Cd2+. Underpotentials are chosen so that only the top atomic layer of an element is removed. Potentials sufficient to strip the elemėnt from the bulk of the CdTe substrate are avoided. Application of the method should involve the use of a simple electrochemical cell, with solution convection. The substrate is placed in the cell and a square wave applied, where each cycle results in the dissolution of a bilayer of the compound. The two potentials of the square wave correspond to underpotential stripping potentials for Cd and Te respectively. Directions for the future development of this etching method are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 335
Copyright
Copyright © Materials Research Society 1992

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