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Direct Comparison of Structural and Electrical Properties of Epitaxial (001)-, (116)-, and (103)-Oriented SrBi2Ta2O9 Thin Films on SrTiO3 and Silicon Substrates

Published online by Cambridge University Press:  21 March 2011

H. N. Lee ,
A. Pignolet ,
S. Senz ,
C. Harnagea  and
D. Hesse
H. N. Lee
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
A. Pignolet
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
S. Senz
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
C. Harnagea
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
D. Hesse
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
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Abstract

Anisotropies of the properties of the bismuth-layered perovskite SrBi2Ta2O9 (SBT) have been investigated using epitaxial thin films grown by pulsed laser deposition both on conducting Nb-doped SrTiO3 (STO) single crystal substrates and on Si(100) substrates. It has been found that the three-dimensional epitaxy relationship SBT(001)∥STO(001); SBT [110] ∥STO[100] can be applied to all SBT thin films on STO substrates of (001), (011), and (111) orientations. An about 1.7 times larger remanent polarization was obtained in (103)-oriented SBT films than in that of (116) orientation, while the (001)-oriented SBT films revealed no ferroelectricity along their c-axis. Non-c-axis-oriented SBT films with a well-defined (116) orientation were also grown on silicon substrates for the first time. They were deposited on Si(100) covered with a conducting SrRuO3 (110) bottom electrode on a YSZ(100) buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC5.3.1
Copyright
Copyright © Materials Research Society 2001

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