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Dislocations and Bubbles in BF+2 Implanted Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
Defects in crystalline silicon caused by a BF+2 ion implantation dose of 3x1015cm-2 have been studied using plan-view and cross-section TEM and SIMS. Dislocations form at annealing temperatures above 1000ºC and are pinned below the Si surface by fluorine bubbles ∼10 nm diameter at a density of ∼1011cm-2. This microstructure is essentially stable at 1150ºC from 4 to 400 minutes.
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