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Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon
Published online by Cambridge University Press: 03 September 2012
Abstract
Self-interstitial sink efficiencies of dislocations γ were measured in gold doped FZ (111) and (100) samples, we found respectively γ=0.4–0.5 and γ=0.2–0.3. γ is probably sensitive to dislocation character and to the deformation process.
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- Copyright © Materials Research Society 1992
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