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Vacancy Diffusion at Polysilicon Encapsulated GaAs Surfaces
Published online by Cambridge University Press: 26 February 2011
Abstract
The diffusivity of Si and P in GaAs encapsulated with heavily-doped polysilicon (poly-Si) is correlated to the flux of Ga and As diffusing from the substrate into the encapsulant. A model based on the diffusion of vacancies into the GaAs is proposed and used to simulate the data.
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- Copyright © Materials Research Society 1988