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Divacancy Annealing in Crystalline Silicon Using E-Beam and Pulsed Ruby Laser Excitation

Published online by Cambridge University Press:  15 February 2011

H. J. Stein ,
J. A. Knapp  and
P. S. Peercy
H. J. Stein
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, USA
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, USA
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, USA This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract number DE–AC04–76DP00789.
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Abstract

Annealing of divacancies which were produced by 11B ion implantation was investigated under furnace, pulsed e-beam and pulsed ruby laser exposures. Despite orders of magnitude shorter exposure times for annealing and the concomitant expected high levels of electronic excitation and layer stress, we find that the thermal annealing mechanism observed for furnace annealing is an adequate description for divacancy annealing under e-beam exposure. The observed need for melting to remove divacancies by Q-switched laser annealing is also consistent with predictions based upon extrapolations from furnace annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 319
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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