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Domain and Interface Structures of Epitaxial PtSi

Published online by Cambridge University Press:  22 February 2011

H. Kawarada ,
I. Ohdomari  and
S. Horiuchi
H. Kawarada
Affiliation:
School of Science and Engineering, Waseda University, 3–l4–1, Ohkubo, Tokyo, Japan
I. Ohdomari
Affiliation:
School of Science and Engineering, Waseda University, 3–l4–1, Ohkubo, Tokyo, Japan
S. Horiuchi
Affiliation:
National Institute for Researches in Inorganic Materials, 1–1, Namiki, Sakura-mura, Niihari-gun, Ibraki, Japan.
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Abstract

The crystalline perfection of epitaxial PtSi thin films and the microstructure of the PtSi/Si interface have been examined using transmission electron microscopy (TEM), including lattice image techniques. Epitaxial PtSi layers grow with domains which have three different positions on a (111) Si substrate. Inside a domain the crystalline perfection is high, and at the domain boundary no intermediate region has been observed. The undulation of the PtSi/Si interface is larger than that of other epitaxial silicide/Si interfaces. Despite the large undulation, a cross-sectional lattice image shows the epitaxial layer extends to the interface. The interface is abrupt in the epitaxial PtSi/Si system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 429
Copyright
Copyright © Materials Research Society 1984

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References

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