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Domain Images and Retention Properties of Pb(Zr,Ti)O3 Thin Films Observed by Electrostatic Force Microscopy

Published online by Cambridge University Press:  10 February 2011

William Jo ,
D. C. Kim  and
J. W. Hong
William Jo
Affiliation:
Devices and Materials Laboratory, LG Corporate Institute of Technology, Seoul 137–724, Korea Present address: Edward L. Ginzton Lab. Stanford University, Stanford, CA94305–4085, Electronic mail: wmjo@loki.stanford.edu
D. C. Kim
Affiliation:
Devices and Materials Laboratory, LG Corporate Institute of Technology, Seoul 137–724, Korea
J. W. Hong
Affiliation:
PSIA Corporation, Yang-Jae Dong 5–6, Seoul 137–070, Korea
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Abstract

We report results on domain retention in preferentially oriented Pb(Zr,Ti)O3 (PZT) thin films on Pt and on LaNiO3 (LNO) electrodes. Effects of bottom electrodes on domain images and retention properties have been explored by detecting an electrostatic force exerted on the biased conductive probe. It was demonstrated that polarization loss of PZT crystallites on LNO appears to be less than that of PZT grains on Pt. Moreover, charge retention was controlled by a reverse-poling protocol during electrostatic force microscopy (EFM) measurements. The surface charge density of the PZT films was observed as a function of time in a selected area where a region is single-poled and another region is reverse-poled. The retention behavior of the regions is very different; the single-poled region shows a declined response and the reverse-poled region reveals a retained characteristic. Decay and retention mechanisms are explained by space-charge redistribution and trapping of defects in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 339
Copyright
Copyright © Materials Research Society 2000

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