Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-16T22:05:32.012Z Has data issue: false hasContentIssue false
  • English
  • Français

The Dopamt Diffusion Mechanism in Eicimer Laser Induced Molten Silicon

Published online by Cambridge University Press:  26 February 2011

Toshiyuki Sameshima  and
Setsuo Usui
Toshiyuki Sameshima
Affiliation:
Sony Corporation Research Center, Yokohama 240 Japan
Setsuo Usui
Affiliation:
Sony Corporation Research Center, Yokohama 240 Japan
Get access

Abstract

We have calculated the degree of dopant diffusion which occurs during non-equilibrium incorporation of boron from the silicon surface into the molten silicon induced by a pulsed excimer laser. When a high-power lascr causes the melt front to proceed into the substrate faster than 8 m/s, p+ -doped regions are formed near the surface of the molten silicon because boron atoms cannot diffuse sufficiently fast for the junction depth to reach the maximum melt depth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 491
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Deutsch, T.F., Fan, J.C.C., Turner, G.W., Chapman, R.L., Ehrlich, D.J. and Osgood, R.M. Jr., Appl. Phys. Lett. 38, 144 (1981).Google Scholar
2 Carey, P.G., Bezjian, K., Sigmon, T.W., Gildea, P. and Magee, T.J., IEEE Electron Device Lett. EDL–7 440 (1986).Google Scholar
3 Sameshima, T. and Usui, S., J. Appl. Phys. 62, 711 (1987).Google Scholar
4 Carslaw, H.S. and Jaeger, J.C., Conduction of Heat in Solids (Oxford University Press, Oxford 1959) chap.2 and chap.10.Google Scholar
5 Goldsmith, A., Waterman, T.E. and Hirschhorn, H.J., Handbook of Thermophysical Properties of Solid Materials (Pergamon, New York, 1961), Vol.1, p.1–576.Google Scholar
6 Wood, R.F. and Giles, G.E., Phys. Rev. B 23, 2923 (1981).Google Scholar
7 Lowndes, D.H., Jellison, G.E. Jr. and Wood, R.F.: Phys. Rev. B 26, 6747 (1982).Google Scholar
8 Wood, R.F., Kirkpatrick, J.R. and Giles, G.E., Phys. Rev. B 23, 5555 (1981).Google Scholar
9 Kodera, H., Jpn. J. Appl. Phys. 2, 212 (1963).Google Scholar