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Drawing or Photon Induced Defects in Silica Based Waveguides

Published online by Cambridge University Press:  25 February 2011

H. Kawazoe
H. Kawazoe*
Affiliation:
Department of Inorganic Materials, Tokyo Institute of Technology, Ohokayama, Meguro-ku, Tokyo 152, JAPAN
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Abstract

A model reaction is proposed which can totally explain formation of the defects detected in SiO2: GeO2 glasses such as E', NBOHC, T-T, bonding, peroxy linkages, and T=O or T(II) species, where T is Si or Ge. The initial reaction is radical decomposition of T-O bonds at high temperatures and the defects are products of the secondary reaction between the initial radical species. The net reaction is expressed as 2TO2⇄2TO+O2, which predicts the dependence of concentration of the radical species on PO2 during processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 88: Symposium P – Optical Fiber Materials and Properties , 1986 , 193
Copyright
Copyright © Materials Research Society 1987

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References

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