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Dry Etch Damage in GaAs P-N Junctions

Published online by Cambridge University Press:  26 February 2011

S. J. Pearton ,
F. Ren ,
C. R. Abernathy ,
T. R. Fullowan  and
J. R. Lothian
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. R. Lothian
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

GaAs p-n junction mesa-diode structures were fabricated so that both n- and p-type layers could be simultaneously exposed to either O2 or H2 discharges. This simulates the ion bombardment during plasma etching with either CCl2F2/O2 or CH4/H2 mixtures. The samples were exposed to 1 mTorr discharges for period of 1–20 min with DC biases of -25 to -400V on the cathode. For O2 ion bombardment, the collector resistance showed only minor (≤10%) increases for biases up to -200 V and more rapid increases thereafter. In our structure, this indicates that bombardment-induced point defects penetrate at least 500 Å of GaAs for ion energies of ≥200eV. The base resistance displayed only a minor increase (∼10%) over the pre-exposure value even for O+ ion energies of 375 eV, due to the very high doping (1020 cm−3 ) in the base. More significant increases in both collector and base resistances were observed for hydrogen ion bombardment due to hydrogen passivation effects. We will give details of this behaviour as a function of ion energy, plasma exposure time and post-treatment annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 301
Copyright
Copyright © Materials Research Society 1992

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References

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