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Dynamic Thresholding with the Three-Terminal Optically Addressed Spatial Light Modulator

Published online by Cambridge University Press:  21 February 2011

Robert A. Rice
Affiliation:
Department of Electrical and Computer Engineering and Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309–0425
Peter J. Close
Affiliation:
Department of Electrical and Computer Engineering and Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309–0425
Garret Moddel
Affiliation:
Department of Electrical and Computer Engineering and Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309–0425
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Abstract

Standard, non-patterned optically addressed spatial light modulators (OASLMs), comprising an a-Si:H photodiode and a ferroelectric liquid crystal (FLC), have a fixed write-light intensity threshold when driven at a particular frequency. We present a patterned OASLM in which the threshold may be varied. The structure and operation of this device is significantly different from the standard OASL.M. While the square-wave drive for the non-patterned OASLM provides a time-varying voltage for the device, the thresholding OASLM uses a dc drive, with spatially separated bias voltages. By varying the voltage applied to a patterned metal layer between the a-Si:H and FLC, we achieved dynamic thresholding over one decade of write-light intensity. Fabricated devices have response times as low as 200 μsec, and contrast ratios as high as 50:1.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Warde, C. and Fisher, A. D., in Optical Signal Processing, edited by Homer, J. (Academic, San Diego, 1987).Google Scholar
2. Li, W., Rice, R. A., Moddel, G., Pagano-Stauffer, L. A., and Handschy, M. A., IEEE Trans. Electron Devices, 36, (12), 2959 (1989).Google Scholar
3. Moddel, G., Ch. 11 in Amorphous and Microcrystalline Semiconductor Devices: Optoelectronic Devices, edited by Kanicki, J., (Artech House, Norwood MA, 1991) pp. 368412.Google Scholar
4. Walker, C. M., Landreth, B., and Moddel, G., Amorphous Silicon Technology-1990, edited by Taylor, P. C., Thompson, M. J., LeComber, P. G., Hamakawa, Y., and Madan, A., Mater. Res. Soc. Proc. 192, Pittsburgh, PA, 1990), pp. 467472).Google Scholar
5. Hereford, J. M. and Rhodes, W. T., Optical Engineering, 27, 274, (1988).Google Scholar
6. Rice, R. A., Moddel, G., Abdulhalim, I., and Walker, C. M., J. Non-Cryst. Solids, 115, 96, (1989).Google Scholar