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The Dynamic Ultrasound Influence on the Diffusion and Drift of the Charge Carriers in Silicon p-n Structures

Published online by Cambridge University Press:  01 February 2011

Roman M. Burbelo ,
Oleg Y. Olikh  and
Mark K. Hinders
Roman M. Burbelo
Affiliation:
RMB@univ.kiev.ua, T. Shevchenko Kyiv National University, Faculty of Physics, 64 Volodimirska Str., Kyiv, 01033, Ukraine, 38 044 5225010
Oleg Y. Olikh
Affiliation:
olikh@mail.univ.kiev.ua, T. Shevchenko Kyiv National University, Faculty of Physics, Volodimirska 64, Kyiv, 01033, Ukraine
Mark K. Hinders
Affiliation:
hinders@as.wm.edu, The College of William & Mary, Applied Science Faculty, McGlothlin 330, Williamsburg, VA, 23187-8795, United States
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Abstract

Nowadays much attention is given to the ultrasound influence on electrophysical properties and defective structure of semiconductors and semiconductor structures [1,2]. In particular, a big interest is caused by the processes which take place in the material under non-equilibrium conditions, caused by the acoustic vibration [2]. This paper is devoted to the study of the ultrasonic waves dynamic influence (in situ) on the processes of the charge transport in a silicon solar sell.

The silicon structures with p-n-transition received by phosphorus ions implantation in a surface layer of Si:B plate have been chosen as the research objects. Transition is located at 0,5 microns depth from surface, n-layer electron concentration is 1019 cm−3, hole concentration is 1.3×1015 cm−3. The specified structures I-V characteristics are measured under ultrasonic fluctuations excitation conditions. The researches were carried out both without external illumination as well as under external illumination. In the latter case, additional carriers photogeneration occurred both at the p-n-transition region and at the p-area depth. Longitudinal acoustic waves were excited in structures with help of LiNbO3 transducer; the ultrasound frequency is 4.1 and 13.6 MHz; the acoustic power is up to 3 W/cm2.

It is revealed, that the changes of diffusion parameters take place at the non-equilibrium conditions caused by ultrasonic lading. These changes are shown in photocurrent rising. Photocurrent increase reached up to 15 %, which corresponds to 2 times diffusion length increasing approximately. Also the essential (up to 40 %) acoustostimulated decreasing of the p-n-transition saturation current is revealed. The characteristic time of the observable effects is level with tens minutes. It is established, that dependence of the dynamic changes on ultrasound power is nonlinear. It is shown, that efficiency of an acoustostimulated influences raises with an ultrasound frequency.

The analysis has shown that observable effects are connected with non-equilibrium processes of defects ionization and reorientation at an acoustic field. It specifies an opportunity of a dynamic management of a charge carriers distribution processes in semiconductor structures by ultrasonic waves.

Keywords

acousticelectrical propertiessemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F03-11
Copyright
Copyright © Materials Research Society 2007

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