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Early Stage of Polycrystalleve Growth of Ge and SiGe by Reactive Thermal Cvd from GeF4 and Si2H6

Published online by Cambridge University Press:  28 February 2011

Jun-Ichi Hanna ,
Takayuki Ohuchi  and
Masaji Yamamoto
Jun-Ichi Hanna
Affiliation:
Tokyo Institute of Technology, Imaging Science & Engineering Lab., Yokohama 226, Japan
Takayuki Ohuchi
Affiliation:
Tokyo Institute of Technology, Imaging Science & Engineering Lab., Yokohama 226, Japan
Masaji Yamamoto
Affiliation:
Tokyo Institute of Technology, Imaging Science & Engineering Lab., Yokohama 226, Japan
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Abstract

We have investigated the structure and crystallinity of poly SiGe and Ge films in the early stage of their growth prepared at < 450°C by means of a new type of thermal CVD from GeF4 and Si2H6. Raman study and SEM observation of the films revealed that the nucleation of crystallites took place directly on the substrate, followed by the grain growth in a manner of island growth. Thus, the crystallinity of the films is well established even in the very early stage of the growth, probably < 10 nm in thickness, in contrast to the poly Si growth in the low-temperature CVD precesses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 877
Copyright
Copyright © Materials Research Society 1995

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References

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