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The Effect of a GaN Nucleation Layer on GaN Film Properties Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

W. Van Der Stricht ,
I. Moerman ,
P. Demeester ,
J.A Crawley ,
E.J. Thrush ,
P.G. Middleton ,
C. Trager Cowan  and
K.P. O'donnell
W. Van Der Stricht
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
I. Moerman
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
P. Demeester
Affiliation:
University of Gent-IMEC, Department of Information Technology, Gent, Belgium
J.A Crawley
Affiliation:
Thomas Swan & Co., Ltd., Cambridge, United Kingdom
E.J. Thrush
Affiliation:
Thomas Swan & Co., Ltd., Cambridge, United Kingdom
P.G. Middleton
Affiliation:
Department of Physics and Applied Physics, Semiconductor Spectroscopy and Devices, University of Strathclyde, Glasgow, United Kingdom.
C. Trager Cowan
Affiliation:
Department of Physics and Applied Physics, Semiconductor Spectroscopy and Devices, University of Strathclyde, Glasgow, United Kingdom.
K.P. O'donnell
Affiliation:
Department of Physics and Applied Physics, Semiconductor Spectroscopy and Devices, University of Strathclyde, Glasgow, United Kingdom.
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Abstract

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 231
Copyright
Copyright © Materials Research Society 1996

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References

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