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Effect of Annealing Under Uniform Stress on Photoluminescence, Electrical and Structural Properties of Silicon

Published online by Cambridge University Press:  15 February 2011

A. Misiuk ,
G. P. Karwasz ,
M. Cazzanelli ,
W. Jung  and
L. Pavesi
A. Misiuk
Affiliation:
Institute of Electron Technology, Lotnikow 46, 02-668 Warszawa, Poland, misiuk@ite.waw.pl
G. P. Karwasz
Affiliation:
Universita di Trento, Sommarive 14,I-38050 Povo, Italy, karwasz@alpha.science.unitn.it
M. Cazzanelli
Affiliation:
Universita di Trento, Sommarive 14,I-38050 Povo, Italy, karwasz@alpha.science.unitn.it
W. Jung
Affiliation:
Institute of Electron Technology, Lotnikow 46, 02-668 Warszawa, Poland, misiuk@ite.waw.pl
L. Pavesi
Affiliation:
Universita di Trento, Sommarive 14,I-38050 Povo, Italy, karwasz@alpha.science.unitn.it
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Abstract

Effect of increased pressure (up to 1.5GPa) during annealing of Cz-Si on creation of thermal donors (at 720 - 1000K) and visible luminescence (peaking at 1.7- 2.2eV for samples annealed at up to 1420K) is reported. The observed phenomena are related to stress - stimulated oxygen clustering / precipitation in Cz-Si resulting in creation of specific defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 245
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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