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Effect of Characteristics of SrRuO3 Buffer Layer on the Ferroelectric Properties of (Pb0.97La0.30)(Zr0.66Ti0.34)O3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Yu-Jen Chen ,
Gwo Jamn ,
Kuo-Shung Liu  and
I-Nan Lina
Yu-Jen Chen
Affiliation:
Department of Materials Science and Engineering, Hsinchu, 300, Taiwan, R.O.C
Gwo Jamn
Affiliation:
Department of Materials Science and Engineering, Hsinchu, 300, Taiwan, R.O.C
Kuo-Shung Liu
Affiliation:
Department of Materials Science and Engineering, Hsinchu, 300, Taiwan, R.O.C
I-Nan Lina
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, 300, Taiwan, R.O.C
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Abstract

A two-step pulsed laser deposition (PLD) process, including PLD at a substrate temperature lower than 150°C and rapid-thermal-annealing (RTA) at around 550°C (30 s), has been successfully applied for growing (Pb0.97La0.03)(Zr0.66Ti0.034)0.9875O3, PLZT, thin films. Interdiffusion between layers is pronouncedly suppressed due to the presence of the SrRuO3 layer, which markedly improves the electrical properties of PLZT films. The PLZT films thus obtained exhibit large remanent polarization P,=19 µC/cm2 (with coercive force Ec=78 kV/cm), low leakage current density J11≤8 × 1O−6 A/cm2 (up to 400 kV/cm) and fatigue free characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 313
Copyright
Copyright © Materials Research Society 1999

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