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The Effect of Contact Implants on the Patterning of Tungsten Damascene Interconnects

Published online by Cambridge University Press:  15 February 2011

J. P. Gambino ,
M. A. Jaso  and
E. N. Levine
J. P. Gambino
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, gambinoj@vnet.ibm.com
M. A. Jaso
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, gambinoj@vnet.ibm.com
E. N. Levine
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, gambinoj@vnet.ibm.com
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Abstract

Contact implants can increase the etch rate of BPSG during HF precleans used prior to metallization. As a result, troughs form in the implanted BPSG that can trap metal and cause leakage between interconnects. It is shown that the increase in HF etch rate is especially pronounced for BF2, implants, due to the presence of F. The topography, and hence the leakage, can be reduced by capping the BPSG with an undoped oxide prior to implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 393
Copyright
Copyright © Materials Research Society 1996

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