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Effect Of μ-Doped Compensated Material on Stability of a-Si:H Solar Cells

Published online by Cambridge University Press:  10 February 2011

D. Caputo ,
G. De Cesare ,
F. Palma  and
M. Tucci
D. Caputo
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering via Eudossiana 18, 00184 Rome (Italy)
G. De Cesare
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering via Eudossiana 18, 00184 Rome (Italy)
F. Palma
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering via Eudossiana 18, 00184 Rome (Italy)
M. Tucci
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering via Eudossiana 18, 00184 Rome (Italy)
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Abstract

In this paper we focus our attention on compensated materials with μ-doping concentration in order to obtain a stable intrinsic layer with initial high photoconductivity suitable for p-i-n solar cells. Films were grown from a mixture of undiluted silane, hydrogen diluted phosphine and hydrogen diluted diborane. Values of dark conductivity around 10-11 Ω-1cm-1 and photosensitivity ratio under AM 1.5 of 6 orders of magnitude have been obtained for phosphine/diborane ratio around 102. The difference between the two dopant concentrations is in agreement with the difference in doping efficiency of the two gases found in the characterization of single μ-doped films.

We compared the degradation behavior of compensated and intrinsic materials with the same initial dark and light conductivity. After about 20 h the photoconductivity of the compensated and the intrinsic material decreased of 33% and 70%, respectively. The space of investigable deposition parameters has been limited by the stress induced by the simultaneous presence of phosphine and diborane which leads to a macroscopic, periodic and regular damage of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 27
Copyright
Copyright © Materials Research Society 1996

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References

1. Staebler, D.L., Wronski, C.R., Appl. Phys. Lett., 31, 292, (1977).Google Scholar
2. Guha, S., Yang, J., Banerjee, A., Glatfelter, T., Hoffman, K., Oshinsky, S.R., Izu, M., Hoshinsky, H.C., Deng, X. in Amorphous Silicon Technology, edited by Shiff, E.A., Hack, M., Madan, A., Powell, M., and Matsuda, A. (Mater. Res. Soc. Proc. 336, Pittsburgh, PA 1994), p. 645–655.Google Scholar
3. Li, Y.M., Yang, L., Bennett, M.S., Chen, L., Jackson, F., Rajan, K., Arya, R.R. in Amorphous Silicon Technology, edited by Shiff, E.A., Hack, M., Madan, A., Powell, M., and Matsuda, A. (Mater. Res. Soc. Proc. 336, Pittsburgh, PA 1994), p. 723–728.Google Scholar
4. Skumanich, A., Amer, N.A., Jackson, W.B., Phys. Rev. B 31, 2263, (1985).Google Scholar
5. Stutzmann, M., Biegelsen, D.K., Street, R.A., Phys. Rev. B 35, 5666, (1987).Google Scholar
6. Caputo, D., Cesare, G. de, Irrera, F., Masini, G., Palma, F., Rossi, M.C., in Amorphous Silicon Technology, edited by Shiff, E.A., Hack, M., Madan, A., Powell, M., and Matsuda, A. (Mater. Res. Soc. Proc. 336, Pittsburgh, PA 1994), p.583–588.Google Scholar