Hostname: page-component-68945f75b7-l9cl4 Total loading time: 0 Render date: 2024-08-05T12:37:32.666Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Electron Beam Irradiation-Enhanced Diffusion on A W-Aluminum Oxide-Ti/Cu Multilayer

Published online by Cambridge University Press:  15 February 2011

S. Ohta  and
H. Takahashi
S. Ohta
Affiliation:
Center for Advanced Research of Energy Technology, Hokkaido University, Kita-ku, Kita- 13, Nishi-8, Sapporo 060-8628, Japan
H. Takahashi
Affiliation:
Center for Advanced Research of Energy Technology, Hokkaido University, Kita-ku, Kita- 13, Nishi-8, Sapporo 060-8628, Japan
Get access

Abstract

Tungsten, aluminum oxide and Ti films were deposited onto a Cu substrate by means of a rf magnetron sputtering method. TEM thin foils for cross-sectional irradiation were prepared using a focused ion beam (FIB). Electron irradiation was carried out in a Hitachi H- 1300 electron microscope at I MV. The specimen temperatures during irradiation were 300, 473, 623 and 703K. The phases of W, aluminum oxide and Ti films were identified from selected area diffraction patterns as bcc, amorphous and hcp phases, respectively. The phases of W and Ti did not change due to irradiation. However, the amorphous aluminum oxide phase transformed to crystalline γ-Aluminum oxide. Electron irradiation caused no change in the composition of the interface of W/aluminum oxide, but diffusion was enhanced on the interfaces of aluminum oxide/Ti and Ti/Cu.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 201
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Xiao, L. and Abbaschian, R., Mater. Sci. Eng. A155, 135 (1992).Google Scholar
2. Alman, D.E., K.G.Shaw, Sroloft, N.S. and Rajan, K., Mater. Sci. Eng. A155, 85 (1992).Google Scholar
3. Suga, T., Materia JAPAN 35, 944 (1990).Google Scholar
4. Matsuura, M., Chida, N. and Fujinuma, H., J. Japan Inst. Metals, 56, 308 (1992).Google Scholar
5. Baglin, J. E. E., Nucl. Instr. and Meth. B65, 119 (1992).Google Scholar
6. Perez, A., Abonneau, E., Fuchs, G., Treilleux, M., McHargue, C. J. and Joslin, D. L., Nucl. Instr. and Meth. B65, 129 (1992).Google Scholar
7. Ahuja, R. and Fraser, H., J. Electronic. Materials 23, 1027 (1994).Google Scholar
8. Schatt, W., Ullrich, H., Kleinsick, K., Dabritz, S., Herenz, A., Bergner, D. and Luck, H., Krist. Techn. 13, 997 (1977).Google Scholar
9. Bullough, R., Hayns, M.R. and Wood, M.H., J. Nucl. Mater. 90,44 (1980).Google Scholar