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Effect of Hot Water Exposure on Bare Silicon Surfaces in Mos Processing

Published online by Cambridge University Press:  21 February 2011

J. H. Eisenberg ,
S. F. Shive ,
F. Stevie ,
G. S. Higashi ,
T. Boone ,
K. Hanson ,
J. B. Sapjeta ,
G. N. Dibello  and
K. L. Fulford
J. H. Eisenberg
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18103
S. F. Shive
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18103
F. Stevie
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18103
G. S. Higashi
Affiliation:
AT&T Bell Laboratories, A Murroay Hill, NJ 07974
T. Boone
Affiliation:
AT&T Bell Laboratories, A Murroay Hill, NJ 07974
K. Hanson
Affiliation:
AT&T Bell Laboratories, A Murroay Hill, NJ 07974
J. B. Sapjeta
Affiliation:
AT&T Bell Laboratories, A Murroay Hill, NJ 07974
G. N. Dibello
Affiliation:
AT&T Microelectronics, Allentown, PA 18103
K. L. Fulford
Affiliation:
AT&T Microelectronics, Allentown, PA 18103
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Abstract

The use of hot water immersion to aid in the drying of wafers subsequent to liquid chemical processing has recently been increasing. Both the TREBOR HydrodryTM and the Isopropyl Alcohol (IPA) dry used by CFM Technologies Inc. use water rinses at elevated temperature. These treatments are of particular concern when they follow HF immersions where surface oxides are removed and bare silicon surfaces are exposed to the hot water. Studies by Watanabe et al.1 show that Si(l 11) facets can be produced by hot water immersion. This, in turn, implies that hot water etches silicon with an anisotropic etch rate. In this work, the etching of oxide patterned Si(100) wafers by immersion in hot water is studied. Etching is clearly observed in images produced by Transmission Electron Microscopy (TEM) with a concomitant increase in surface roughness. The rate of etching varies dramatically with the dissolved oxygen concentration of the water used. Possible mechanisms to explain the etching will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 485
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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