Hostname: page-component-84b7d79bbc-4hvwz Total loading time: 0 Render date: 2024-08-01T10:23:06.379Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Implantation Dose and Annealing Time on the Formation of Si Nanocrystals Embedded in Thermal Oxide

Published online by Cambridge University Press:  01 February 2011

Cong Qian ,
Zheng-xuan Zhang ,
Feng Zhang  and
Cheng-lu Lin
Cong Qian
Affiliation:
qiancong@263.net, Shanghai Institute of Microsystem and and Information Technology, Chinese Academy of Sciences, National Key Laboratory of Functional Materials for Informatics, Rm 514, No.6 Building, No.865 Changning Rd, Changning District, Shanghai City, P.R. China, Shanghai, 200050, China, People's Republic of
Zheng-xuan Zhang
Affiliation:
zxzhang@mail.sim.ac.cn, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China, People's Republic of
Feng Zhang
Affiliation:
fzhang@mail.sim.ac.cn, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China, People's Republic of
Cheng-lu Lin
Affiliation:
cllin@simgui.com.cn, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China, People's Republic of
Get access

Abstract

Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS) are employed to study the Si nanocrystals formed in the thermal oxide by Si+ implantation. PL results estimate the size of nanocrystals and the concentration of Pb centers in the Si-SiO2 nanocrystal-matrix interfaces. It is shown that the size of Si nanocrystals increase with implantation dose. Increasing the dose from 1×1016 to 1×1017 Si+/cm2 shifts the size of nanocrystals from ~2 nm to ~3.5nm, while prolonging the annealing time from 1h to 2h has no effect on the position of PL peak. P and Ar implantations into the SiO2 films are also investigated to suggested that the PL peak is due to implant induced chemical changes rather than implant induced damage. XPS analysis shows that the concentration of Si nanocrystals increases with Si implantation dose. Research on the annealing dependence of the forming of Si nanocrystals suggests that 1000°C annealing produces larger amount of Si nanocrystals than 1100°C annealing.

Keywords

nanostructureion-implantationx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1020: Symposium GG – Ion-Beam-Based Nanofabrication , 2007 , 1020-GG07-19
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Liu, Y., chen, T. P., Fu, Y.Q., Tse, M.S., Hsieh, J.H., Ho, P.F. and Liu, Y.C., J. Phys. D: Appl. Phys., 36, 97 (2003)Google Scholar
2. Fernandez, B. Garrido, Lopez, M., Garcia, C., Perez-Rodriguez, A., Morante, J.R., Bonafos, C., Carrada, M. and Claverie, A., J. Appl. Phys., 91(2), 798 (2002)Google Scholar
3. Mrstik, B. J. and Hughes, H. L., IEEE Trans. Nucl. Sci., 50(6), 1947 (2003)Google Scholar
4. Ioannou-Sougleridis, V., Kamenev, B., Kouvatsos, D.N. and Nassiopoulou, A.G.., Mater. Sci. and Eng., B101, 324 (2003)Google Scholar
5. Photopoulos, P., Nassiopoulou, A.G., Kouvatsos, D.N. and Travlos, A., Appl, Phys. Lett., 76(24), 3588 (2000)Google Scholar
6. Photopoulos, P. and Nassiopoulou, A.G., Appl. Phys. Lett., 77(12), 1816 (2000)Google Scholar
7. Mrstik, B. J. and Hughes, H. L. IEEE Trans. Nucl. Sci., 47(6), 2189 (2000)Google Scholar
8. Ziegler, J. F. and Biersack, J. P., SRIM 2003 ProgramGoogle Scholar
9. Nicklaw, C. J., Pagey, M. P., Pantelides, S. T., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Wittig, J. E., Howard, B. M., Taw, E., McNeil, W. H., and Conley, J. F., IEEE Trans. Nucl. Sci., 47(6), 1947 (2269)Google Scholar
10. Shimizu-Iwayama, Tsutomu, Kurumado, Norihiro, Hole, David E. and Townsend, Peter D., J. Appl. Phys., 83, p.6018 (1998)Google Scholar