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The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV Implanted Si

Published online by Cambridge University Press:  03 September 2012

S. Libertino ,
S. Coffa ,
V. Privitera  and
F. Priolo
S. Libertino
Affiliation:
INFM and Dipartimento Di Fisica, Universittà di Catania, C.so Italia 57, 1–95129, Catania, Italy
S. Coffa
Affiliation:
CNR-IMETEM, Stradale Primosole 50, I - 95121, Catania, Italy
V. Privitera
Affiliation:
CNR-IMETEM, Stradale Primosole 50, I - 95121, Catania, Italy
F. Priolo
Affiliation:
INFM and Dipartimento Di Fisica, Universittà di Catania, C.so Italia 57, 1–95129, Catania, Italy
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Abstract

We used deep level transient spectroscopy to determine the concentration and depth profile of the defects introduced by MeV He and Si implants in n-type crystalline Si. We have found that only ∼ 16% of the Frenkel pairs generated by the ion escapes recombination and is stored into room temperature stable defects such as divacancies and oxygen vacancy complexes. For a light ion (He), the depth distribution of these defect complexes is strongly dependent on the O content of the substrate: it mirrors the initial distribution of I-V pairs, as calculated by TRIM (a Monte Carlo Code) when the O content is high (∼ 1018/cm3) while it can be much wider (up to 2 μm) in a highly pure (low O content) epitaxial substrate. This effect is due to a long range migration of vacancies before clustering or trapping at impurities. This migration is strongly inhibited for an ion of higher mass (such as Si) since in a denser collision cascade direct clustering is strongly favoured with respect to agglomeration of migrating defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 65
Copyright
Copyright © Materials Research Society 1997

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