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The Effect of Inorganic Thin Film Material Processing and Properties on Stress in Silicon Piezoresistive Pressure Sensors

Published online by Cambridge University Press:  15 February 2011

G. Bitko ,
A. C. McNeil  and
D. J. Monk
G. Bitko
Affiliation:
Motorola, Semiconductor Products Sector, Sensor Products Division, M/D D138, 5005 E. McDowell Rd., Phoenix, AZ 85008
A. C. McNeil
Affiliation:
Motorola, Semiconductor Products Sector, Sensor Products Division, M/D D138, 5005 E. McDowell Rd., Phoenix, AZ 85008
D. J. Monk
Affiliation:
Motorola, Semiconductor Products Sector, Sensor Products Division, M/D D138, 5005 E. McDowell Rd., Phoenix, AZ 85008
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Abstract

Silicon bulk micromachined piezoresistive pressure sensors are sensitive to stresses caused by the application of inorganic thin films typically used for passivation purposes, and the change in stress that is caused by temperature changes in the operating environment of the sensor. Stress behavior over temperature is characterized for both thermal oxides grown on silicon at thicknesses from 0.18 μm to 0.36 μm, and PECVD silicon nitride films at thicknesses from 0.40 μm to 0.80 μn. Electrical parametric behavior is characterized for typical piezoresistive pressure sensors with these thin films deposited and patterned in several proposed passivation schemes. A finite element analysis is performed to predict how device parameters vary as a function of thin film patterning and properties. Correlations are drawn between model predictions, independent thin film behavior, and device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 221
Copyright
Copyright © Materials Research Society 1997

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