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Effect of Mn Doping in ZnO Thin Films Deposited by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

P. Bhattacharya ,
Rasmi R. Das ,
J. Nieves ,
Yu. I. Yuzyuk  and
Ram S. Katiyar
P. Bhattacharya
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343
Rasmi R. Das
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343
J. Nieves
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343
Yu. I. Yuzyuk
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343
Ram S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343
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Abstract

Mn doped ZnO thin films were grown using pulsed laser deposition technique on (001) Al2O3 substrates. The x-ray diffraction data confirmed highly c-axis oriented and hexagonal structure of ZnO and Mn doped ZnO thin films. However, an unidentified secondary peak was observed at very close to ZnO (002) peak. Micro Raman spectra of ceramics as well as thin films showed disorder induced Raman bands besides standard wurtzite ZnO modes. The intensity of several LO modes of ZnO was increased with the increase of Mn concentration. Optical absorption data showed an additional absorption band towards lower than bandgap energy (3 eV) with the increase in Mn content. The incorporation of Mn in ZnO thin films reduced the value of resistivities and mobilities with an increase in carrier concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.20
Copyright
Copyright © Materials Research Society 2003

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