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Effect of Ni-Si Disordered Layer on the Electronic Properties of Ni Silicide Barrier Contacts on Silicon

Published online by Cambridge University Press:  15 February 2011

A. C. Rastogi  and
P. K. John
A. C. Rastogi
Affiliation:
National Physical Laboratory, K.S. Krishnan Road, New Delhi 110012, India
P. K. John
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada N6A 3K7
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Abstract

Changes in current transport and barrier heights of Ni-Si contacts as it undergoes atomic rearrangement and redistribution of charges under transient light annealing is studied with time resolution of 0.6 msec. Formation of an intermixed Ni-Si disordered layer by Ni-diffusion is shown by Auger data. Intrinsic barrier height of 0.7 eV increases to 0.82 eV as the spatial extent, disorder and density of Ni atoms which introduce new localized ststes at Ev+0.7 eV increases. Electronic properties of silicide contacts are affected by local interfacial bonds than by the characteristic of later grown silicide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 559
Copyright
Copyright © Materials Research Society 1996

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