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Effect of Pressure on the energy band gaps of InxGa1-xN and InxAl1-xN

Published online by Cambridge University Press:  11 February 2011

Z. Dridi ,
B. Bouhafs  and
P. Ruterana
Z. Dridi
Affiliation:
LERMAT, FRE 2149-CNRS, ISMRA, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France. Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 22000 Sidi Bel-Abbes, Algeria.
B. Bouhafs
Affiliation:
LERMAT, FRE 2149-CNRS, ISMRA, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France. Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 22000 Sidi Bel-Abbes, Algeria.
P. Ruterana
Affiliation:
LERMAT, FRE 2149-CNRS, ISMRA, 6 Boulevard Marechal Juin, 14050 Caen Cedex, France.
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Abstract

Using a first-principles method, we study the effect of pressure on the band gap energies of wurtzite InxGa1-xN, and InxAl1-xN. The fundamental band gap energies are direct and increase rapidly with pressure. The pressure coefficients vary in the range of 19.8–24.8 meV/GPa for InxGa1-xN, and 16.7–20.7 meV/GPa for InxAl1-xN; they depend on alloy composition with a strong deviation from linearity. The band gap bowing of the InGaN increases continuously with pressure while those of InAlN strongly decreases at p=14 GPa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.25
Copyright
Copyright © Materials Research Society 2003

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