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The Effect of SiGe Barriers on the Thermal Stability of Highly B-Doped Si Surface Layers

Published online by Cambridge University Press:  11 February 2011

Phillip E. Thompson ,
Joe Bennett ,
Robert Crosby  and
Mark E. Twigg
Phillip E. Thompson
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375, U.S.A.
Joe Bennett
Affiliation:
International SEMATECH, Austin TX 78741, U.S.A.
Robert Crosby
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375, U.S.A.
Mark E. Twigg
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375, U.S.A.
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Abstract

We have investigated the use of low-temperature (320 °C) molecular-beam epitaxy (MBE) to form highly conductive, p+, ultra-shallow layers in Si. Although the as-grown B-doped Si is electrically active, in a practical application the doped layers may be exposed to high temperature during post-growth device processing. To minimize the B diffusion, we investigated the use of SiGe diffusion barrier layers. In this work we demonstrate there is less B redistribution with the SiGe diffusion barriers. The use of SiGe diffusion barriers may prove to be critical in the activation of B implants for the formation of ultra-shallow junctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N4.1
Copyright
Copyright © Materials Research Society 2003

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References

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