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The Effect of Stress in the PdGe Mediated Solid Phase Epitaxial Growth of Ge on GaAs

Published online by Cambridge University Press:  15 March 2011

Fabian Radulescu  and
John M. McCarthy
Fabian Radulescu
Affiliation:
Department of Materials Science and Engineering, Oregon Graduate Institute of Science and Technology, P.O. Box 91000, Portland, Oregon, 97291
John M. McCarthy
Affiliation:
Department of Materials Science and Engineering, Oregon Graduate Institute of Science and Technology, P.O. Box 91000, Portland, Oregon, 97291
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Abstract

The residual stress and the microstructure associated with it were studied in connection with the Pd-Ge ohmic contact formation on GaAs. Evaporated Pd (20 nm) / Ge (150 nm) / Pd (50 nm) thin film stacks on GaAs were annealed at various temperatures and the resulting microstructures were investigated by transmission electron microscopy (TEM). Micro-cantilever beam structures were fabricated with a focused ion beam (FIB) workstation and the residual stress present was calculated from the deflection magnitude. It was found that Ge solid phase epitaxial (SPE) growth on GaAs is associated with a stress relaxation of the thin film system. A new model that suggests the tensile stress induced by the intermediate layer may play an important role in the SPE growth mechanism is proposed. Other cases of solid phase heteroepitaxial growth with an intermediate medium, such as Ge/Au/Si, Co/Ti/Si (the TIME method) and Co/SiOx/Si (the OME method) are discussed in light of this newly proposed model. Also, the possibility of using controlled stress to engineer new methods for growing SPE based heterostructures will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O6.11
Copyright
Copyright © Materials Research Society 2000

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