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The Effect of Substrate Temperature on the Crystallinity and Stress of Ion Beam Sputtered Silicon on Various Substrates

Published online by Cambridge University Press:  22 February 2011

Cynthia G. Madras ,
L. Goldman ,
P.Y. Wong  and
I.N. Miaoulis
Cynthia G. Madras
Affiliation:
Advanced Materials Department, Raytheon Research Division, Lexington, MA 02173 Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02155
L. Goldman
Affiliation:
Advanced Materials Department, Raytheon Research Division, Lexington, MA 02173
P.Y. Wong
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02155
I.N. Miaoulis
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02155
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Abstract

Amorphous and polycrystalline silicon films are commonly used in a wide range of microelectronic and optical devices. Polycrystalline silicon is conventionally deposited by chemical vapor deposition (CVD) at temperatures in excess of 600°C. At these high deposition temperatures, thermal diffusion of dopants and thermally induced chemical reactions may occur within the substrate or device. Also, substrates with low melting temperatures such as germanium, may undergo irreversible deformation. In the present study, ion beam sputtering has been shown to enable the deposition of a stable polycrystalline silicon film on germanium as well as on silicon and glass substrates at temperatures as low as 350-400°C. The crystallization properties of silicon on the different substrate surfaces is reported. Crystallinity of the ion beam sputtered silicon films as a function of deposition temperature and substrate type is measured by X-Ray diffraction. These polysilicon films are shown to be thermally stable, have randomly oriented crystals, and have good adhesion to the substrates despite high compressive deposition stresses ranging from 700MPa to 1000MPa. Magnetron sputtered silicon films deposited on substrates in the same temperature range produced only completely amorphous films, with lower stresses and which are also thermally stable. This study demonstrated the feasibility of depositing extremely hard polycrystalline silicon films on germanium and other substrates by means of physical vapor deposition at temperatures as low as 350°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 179
Copyright
Copyright © Materials Research Society 1994

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References

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