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Effectiveness of Thin Film Encapsulants for Reducing Evaporation during Rapid Thermal Processing of GaAs

Published online by Cambridge University Press:  28 February 2011

T. E. Haynes ,
S. T. Picraux  and
W. K. Chu
T. E. Haynes
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
S. T. Picraux
Affiliation:
Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185
W. K. Chu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
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Abstract

A technique is described for direct measurement of evaporation of Ga and As from capped GaAs during RTP. Application of this method to the study of Si, SiO2, and Si3N4 caps with thicknesses of 20 nm to 60 nm provides a direct measure of the temperature ranges for which the caps are able to prevent evaporation during RTP. In addition, kinetic studies of the evaporation at slightly higher temperatures provides information useful for establishing the predominant evaporation mechanism. For the encapsulants studied, these measurements indicate that the observed evaporation is due to formation of cracks in the film during the initial 10 sec of RTP.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 693
Copyright
Copyright © Materials Research Society 1987

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References

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