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Effects of Additive Gas on SiO2 Etching

Published online by Cambridge University Press:  25 February 2011

Yasuhiro Miyakawa ,
Jun Hashimoto ,
Naokatsu Ikegami  and
Jun Kanamori
Yasuhiro Miyakawa
Affiliation:
VLSI Research and Development Center, Oki Electric Industry Co., Ltd., 550–1 Higashiasakawa, Hachioji, Tokyo 193, Japan
Jun Hashimoto
Affiliation:
VLSI Research and Development Center, Oki Electric Industry Co., Ltd., 550–1 Higashiasakawa, Hachioji, Tokyo 193, Japan
Naokatsu Ikegami
Affiliation:
VLSI Research and Development Center, Oki Electric Industry Co., Ltd., 550–1 Higashiasakawa, Hachioji, Tokyo 193, Japan
Jun Kanamori
Affiliation:
VLSI Research and Development Center, Oki Electric Industry Co., Ltd., 550–1 Higashiasakawa, Hachioji, Tokyo 193, Japan
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Abstract

Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that N2 addition to Ar/CHF3/CF4 sharpens etched profile with CD loss kept small. And N2 addition also increases etch rate without a heavy deterioration of selectivity of SiO2 versus heavily doped n-type poly cry stall ine Si(n+ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 813
Copyright
Copyright © Materials Research Society 1993

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References

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